amplifiers - smt 5 5 - 72 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc327ms8g / 327MS8GE gaas ingap hbt mmic power amplifier, 3.0 - 4.0 ghz v04.0607 general description features functional diagram the hmc327ms8g & hmc327MS8GE are high ef - ciency gaas ingap heterojunction bipolar transistor (hbt) mmic power ampli ers which operate between 3.0 and 4.0 ghz. the ampli er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved rf and thermal performance. with a minimum of external components, the ampli er pro- vides 21 db of gain, +30 dbm of saturated power at 45% pae from a +5.0v supply voltage. power down capability is available to conserve current consump- tion when the ampli er is not in use. gain: 21 db saturated power: +30 dbm 45% pae supply voltage: +5.0 v power down capability low external part count electrical specifications, t a = +25 c, vs = 5v, vctl = 5v typical applications this ampli er is ideal for use as a power ampli er for 3.3 - 3.6 ghz applications: ? wireless local loop parameter min. typ. max. units frequency range 3.0 - 4.0 ghz gain 17 21 24 db gain variation over temperature 0.025 0.035 db / c input return loss 15 db output return loss 8db output power for 1db compression (p1db) 24 27 dbm saturated output power (psat) 30 dbm output third order intercept (ip3) 36 40 dbm noise figure 5.0 db supply current (icq) vpd = 0v/5v 0.002 / 250 ma control current (ipd) vpd = 5v 7 ma switching speed ton, toff 40 ns
amplifiers - smt 5 5 - 73 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature -25 -20 -15 -10 -5 0 5 10 15 20 25 2 2.5 3 3.5 4 4.5 5 s21 s11 s22 response (db) frequency (ghz) -15 -10 -5 0 2.5 3 3.5 4 4.5 +25 c +85 c -40 c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 2.5 3 3.5 4 4.5 +25 c +85 c -40 c return loss (db) frequency (ghz) 14 16 18 20 22 24 26 28 30 32 34 2.5 3 3.5 4 4.5 +25 c +85 c -40 c psat (dbm) frequency (ghz) 14 16 18 20 22 24 26 28 30 32 34 2.5 3 3.5 4 4.5 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 24 2.5 3 3.5 4 4.5 +25 c +85 c -40 c gain (db) frequency (ghz) hmc327ms8g / 327MS8GE gaas ingap hbt mmic power amplifier, 3.0 - 4.0 ghz v04.0607
amplifiers - smt 5 5 - 74 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power compression @ 3.5 ghz output ip3 vs. temperature noise figure vs. temperature gain & power vs. supply voltage reverse isolation vs. temperature power down isolation 18 19 20 21 22 23 24 25 26 27 28 22 23 24 25 26 27 28 29 30 31 32 4.75 5 5.25 gain p1db psat gain db) vcc supply voltage (vdc) 0 1 2 3 4 5 6 7 8 9 10 3 3.5 4 4.5 +25 c +85 c -40 c noise figure (db) frequency (ghz) 0 6 12 18 24 30 36 42 48 -5 -3 -1 1 3 5 7 9 11 13 15 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 2.5 3 3.5 4 4.5 +25 c +85 c -40 c oip3 (dbm) frequency (ghz) -60 -50 -40 -30 -20 -10 0 2.5 3 3.5 4 4.5 +25 c +85 c -40 c isolation (db) frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 2.5 3 3.5 4 4.5 isolation (db) frequency (ghz) hmc327ms8g / 327MS8GE gaas ingap hbt mmic power amplifier, 3.0 - 4.0 ghz v04.0607
amplifiers - smt 5 5 - 75 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings gain, power & quiescent supply current vs. vpd @ 3.5 ghz collector bias voltage (vcc) +5.5 vdc control voltage (vpd) +5.5 vdc rf input power (rfin)(vs = vctl = +5.0 vdc) +16 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 29 mw/c above 85 c) 1.88 w thermal resistance (junction to ground paddle) 34 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c 5 10 15 20 25 30 0 50 100 150 200 250 2.5 3 3.5 4 4.5 5 p1db psat gain icq gain (db), p1db (dbm), psat (dbm) icq (ma) vpd (vdc) hmc327ms8g / 327MS8GE gaas ingap hbt mmic power amplifier, 3.0 - 4.0 ghz v04.0607 notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. dimension does not include moldflash of 0.15mm per side. 4. dimension does not include moldflash of 0.25mm per side. 5. all ground leads and ground paddle must be soldered to pcb rf ground. part number package body material lead finish msl rating package marking [3] hmc327ms8g low stress injection molded plastic sn/pb solder msl1 [1] h327 xxxx hmc327MS8GE rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h327 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information electrostatic sensitive device observe handling precautions
amplifiers - smt 5 5 - 76 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pin number function description interface schematic 1vpd power control pin. for maximum power, this pin hsould be connected to 5.0v. a higher voltage is not recommended. for lower idle current, this voltage can be reduced. 2, 4, 7 gnd ground: backside of package has exposed metal ground slug that must be connected to ground thru a short path. vias under the device are required. 3 rfin this pin is ac coupled and matched to 50 ohms from 3.0 to 4.0 ghz. 5, 6 rfout rf output and bias for the output stage. the power supply for the output device needs to be supplied to these pins. 8vcc power supply voltage for the rst ampli er stage. an external bypass capacitor of 330 pf is required. this capacitor should be placed as close to the device as possible. pin descriptions hmc327ms8g / 327MS8GE gaas ingap hbt mmic power amplifier, 3.0 - 4.0 ghz v04.0607
amplifiers - smt 5 5 - 77 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con- nected directly to the ground plane similar to that shown. a suf cient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 104991 [1] item description j1 - j2 pcb mount sma rf connector j3 2 mm dc header c1 - c3 330 pf capacitor, 0603 pkg. c4 1.2 pf capacitor, 0603 pkg. c5 2.0 pf capacitor, 0402 pkg. c6 2.2 f capacitor, tantalum l1 3.0 nh inductor, 0805 pkg. r1 130 ohm resistor, 0603 pkg. u1 hmc327ms8g / hmc327MS8GE ampli er pcb [2] 104829 eval board [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 hmc327ms8g / 327MS8GE gaas ingap hbt mmic power amplifier, 3.0 - 4.0 ghz v04.0607
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